Description: The tool is equipped with 6-inch targets to sputter deposit the following materials; SiO₂, W, Mo, Ti and Ni.  The chamber is equipped with a RF etch station for etching/cleaning samples before deposition.

Specification:  Runs an argon plasma (10 mTorr) with a 2.5 kW RF generator.  The tool uses an 8-inch cryopump to produce high vacuum in the chamber.