Description: This tool is equipped with dual chambers, a master and slave system running from a single programmable computer interface.  This dual system is utilized by using one chamber for Planar Etching normally carried out on a grounded substrate electrode with a parallel driven electrode at pressures between 100 mTorr and 1 Torr, or opposing system designed for Reactive Ion Etching carried out with a driven substrate electrode at pressures between 10 mTorr and 100 mTorr.

Specifications: RF power =   W.  Master chamber is used to etch nitrides, oxides or poly-Si.  The Master chamber uses O₂, CF₄, SF₆ and N₂.  The slave unit is used to etch Si or Al.  The slave has BCl₃, Cl₂, SiCl₄, O₂ and N₂.

RIE Master Unit

RIE Slave Unit