Description: The Plasmaquest is a microwave after-glow CVD reactor used for low temperature SiO₂ and Si₃N₄ deposition.  The reactor is fully automated for single wafer operation designed for R/D and pilot line use.

Specifications: Microwave (2.45 GHz) power = 250 Watts; resistively heated wafer chuck, temperature range 50 - 300 ^oC; upstream (N₂O, NH₃, CF₄, and He) and downstream (SiH₄) process gas manifold with 5 MFC; handles pieces to 4-inch wafers; typical process chamber pressures 400 -750 mTorr.