Description:  This table-top tool is an upgraded 410.  It is primarily used for rapid thermal processing of compound semiconductors. The RTP is equipped with a SiC coated graphite susceptor to handle pieces.  

Specifications: Heating range 1 - 200 ^oC/s; cooling range (temperature dependent) 150 ^oC/s; steady state temperature 400 -1200 ^oC.  Temperature monitoring by thermocouple and optical pyrometer.  Wafer sizes, 6-inches, 4-inches, and 3-inches and pieces with susceptor.